AS1M040120T
ActiveANBON SEMICONDUCTOR (INT'L) LIMITED
N-CHANNEL SILICON CARBIDE POWER
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AS1M040120T
ActiveANBON SEMICONDUCTOR (INT'L) LIMITED
N-CHANNEL SILICON CARBIDE POWER
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | AS1M040120T |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 142 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2946 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) | 330 W |
| Rds On (Max) @ Id, Vgs | 55 mOhm |
| Supplier Device Package | TO-247-4 |
| Vgs (Max) [Max] | 25 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 20.71 | |
| 10 | $ 18.41 | |||
| 100 | $ 16.10 | |||
| 500 | $ 13.74 | |||
Description
General part information
AS1M040120T
N-Channel 1200 V 60A (Tc) 330W (Tc) Through Hole TO-247-4
Documents
Technical documentation and resources