FBG10N30BC
ActiveEPC Space, LLC
GAN FET HEMT100V30A COTS 4FSMD-B
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet
FBG10N30BC
ActiveEPC Space, LLC
GAN FET HEMT100V30A COTS 4FSMD-B
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | FBG10N30BC |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 30 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 4-SMD, No Lead |
| Rds On (Max) @ Id, Vgs | 9 mOhm |
| Supplier Device Package | 4-SMD |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) [Max] | 6 V |
| Vgs (Max) [Min] | -4 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 287.76 | |
| 10 | $ 269.52 | |||
Description
General part information
FBG10N30BC
N-Channel 100 V 30A (Tc) Surface Mount 4-SMD
Documents
Technical documentation and resources