QX817N-FeH-ME
ActiveBeking Optoelectronics
OPTOISOLATOR TRANSISTOR 817
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QX817N-FeH-ME
ActiveBeking Optoelectronics
OPTOISOLATOR TRANSISTOR 817
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | QX817N-FeH-ME |
|---|---|
| Current Transfer Ratio (Max) [Max] | 600 % |
| Current Transfer Ratio (Min) [Min] | 80 % |
| Input Type | DC |
| Mounting Type | Through Hole |
| Number of Channels | 1 |
| Operating Temperature [Max] | 110 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Rise / Fall Time (Typ) [custom] | 3 µs |
| Rise / Fall Time (Typ) [custom] | 4 µs |
| Supplier Device Package | 4-DIP-M |
| Vce Saturation (Max) | 200 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 2000 | $ 0.05 | |
| 4000 | $ 0.04 | |||
| 10000 | $ 0.02 | |||
| 20000 | $ 0.02 | |||
| 40000 | $ 0.02 | |||
Description
General part information
QX817N-FeH-ME
Optoisolator Output 5000Vrms 1 Channel 4-DIP-M
Documents
Technical documentation and resources