IPZA60R016CM8XKSA1
ActiveMOSFET, N-CH, 600V, 123A, TO-247 ROHS COMPLIANT: YES
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IPZA60R016CM8XKSA1
ActiveMOSFET, N-CH, 600V, 123A, TO-247 ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPZA60R016CM8XKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 123 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 171 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 7545 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) | 521 W |
| Rds On (Max) @ Id, Vgs | 16 mOhm |
| Supplier Device Package | PG-TO247-4-U02 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPZA60R016CM8XKSA1
The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.
Documents
Technical documentation and resources
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