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IXFP8N50PM - TO-220-3

IXFP8N50PM

Obsolete
IXYS

MOSFET N-CH 500V 4.4A TO220AB

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IXFP8N50PM - TO-220-3

IXFP8N50PM

Obsolete
IXYS

MOSFET N-CH 500V 4.4A TO220AB

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Technical Specifications

Parameters and characteristics for this part

SpecificationIXFP8N50PM
Current - Continuous Drain (Id) @ 25°C4.4 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [x]20 nC
Input Capacitance (Ciss) (Max) @ Vds1050 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)42 W
Rds On (Max) @ Id, Vgs800 mOhm
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IXFP8N50PM

N-Channel 500 V 4.4A (Tc) 42W (Tc) Through Hole TO-220-3

Documents

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