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FR12K05

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GeneSiC Semiconductor

DIODE GEN PURP 800V 12A DO4

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FR12K05

Active
GeneSiC Semiconductor

DIODE GEN PURP 800V 12A DO4

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFR12K05
Current - Average Rectified (Io)12 A
Current - Reverse Leakage @ Vr25 µA
Mounting TypeChassis, Stud Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-65 C
Package / CaseStud, DO-203AA, DO-4
Reverse Recovery Time (trr)500 ns
Speed200 mA, 500 ns
Supplier Device PackageDO-4
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]800 V
Voltage - Forward (Vf) (Max) @ If800 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1000$ 5.84

Description

General part information

FR12K05

Diode 800 V 12A Chassis, Stud Mount DO-4

Documents

Technical documentation and resources