FBG20N18BC

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EPC Space, LLC

GAN FET HEMT200V18A COTS 4FSMD-B

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EPC Space, LLC

GAN FET HEMT200V18A COTS 4FSMD-B

Technical Specifications

Parameters and characteristics for this part

Specification	FBG20N18BC

Configuration	N-Channel
Current - Continuous Drain (Id) @ 25°C	18 A
Current - Test	18 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-SMD, No Lead
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	4-SMD
Technology	GaNFET (Gallium Nitride), GaN HEMT
Vgs (Max) [Max]	6 V
Vgs (Max) [Min]	-4 V
Vgs(th) (Max) @ Id	2.5 V
Voltage - Rated	200 V
Voltage - Test	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

RF Mosfet 100 V 18 A 4-SMD

Technical documentation and resources