IXTY2N60P

Obsolete

IXYS

MOSFET N-CH 600V 2A TO252

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET N-CH 600V 2A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	IXTY2N60P

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7 nC
Input Capacitance (Ciss) (Max) @ Vds	240 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	55 W
Rds On (Max) @ Id, Vgs	5.1 Ohm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 2A (Tc) 55W (Tc) Surface Mount TO-252AA

Technical documentation and resources