R2000-T
ActiveRectron USA
DIODE GEN PURP 1A DO41
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R2000-T
ActiveRectron USA
DIODE GEN PURP 1A DO41
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | R2000-T |
|---|---|
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage @ Vr | 5 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | DO-204AL, DO-41, Axial |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | DO-41 |
| Technology | Standard |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 5000 | $ 0.05 | |
Description
General part information
R2000-T
Diode 1A Through Hole DO-41
Documents
Technical documentation and resources