FF12040J-7

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SICFET N-CH 1200V 45A TO-263-7L

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fastSiC

SICFET N-CH 1200V 45A TO-263-7L

Technical Specifications

Parameters and characteristics for this part

Specification	FF12040J-7

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	117 nC
Input Capacitance (Ciss) (Max) @ Vds	3129 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max)	187 W
Rds On (Max) @ Id, Vgs	56 mOhm
Supplier Device Package	TO-263-7L
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs (Max) [Max]	18 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	2.5 V, 40 mA

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General part information

N-Channel 1200 V 45A (Tc) 187W (Tc) Surface Mount TO-263-7L

Technical documentation and resources