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HGTG32N60E2 - IFEINFAIGW50N65F5XKSA1

HGTG32N60E2

Active
Harris Corporation

IGBT 600V 50A TO-247

Deep-Dive with AI

Search across all available documentation for this part.

HGTG32N60E2 - IFEINFAIGW50N65F5XKSA1

HGTG32N60E2

Active
Harris Corporation

IGBT 600V 50A TO-247

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationHGTG32N60E2
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)200 A
Gate Charge265 nC
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]208 W
Supplier Device PackageTO-247
Vce(on) (Max) @ Vge, Ic2.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 40$ 7.51

Description

General part information

HGTG32N60E2

IGBT 600 V 50 A 208 W Through Hole TO-247

Documents

Technical documentation and resources

No documents available