IGN1011L70
ActiveIntegra Technologies Inc.
RF MOSFET GAN HEMT 50V PL32A2
Deep-Dive with AI
Search across all available documentation for this part.
IGN1011L70
ActiveIntegra Technologies Inc.
RF MOSFET GAN HEMT 50V PL32A2
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IGN1011L70 |
|---|---|
| Current - Test | 22 mA |
| Frequency [Max] | 1.09 GHz |
| Frequency [Min] | 1.03 GHz |
| Gain | 22 dBi |
| Mounting Type | Chassis Mount |
| Package / Case | PL32A2 |
| Power - Output | 80 W |
| Technology | GaN HEMT |
| Voltage - Rated | 120 VDC |
| Voltage - Test | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 190.69 | |
| 15 | $ 185.00 | |||
Description
General part information
IGN1011L70
RF Mosfet 50 V 22 mA 1.03GHz ~ 1.09GHz 22dB 80W PL32A2
Documents
Technical documentation and resources
No documents available