EPC7004BSH

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EPC Space, LLC

GAN FET HEMT

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Active

EPC Space, LLC

GAN FET HEMT

Technical Specifications

Parameters and characteristics for this part

Specification	EPC7004BSH

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC
Input Capacitance (Ciss) (Max) @ Vds	1000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-SMD, No Lead
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	4-FSMD-B
Technology	GaNFET (Gallium Nitride)
Vgs (Max) [Max]	6 V
Vgs (Max) [Min]	-4 V
Vgs(th) (Max) @ Id	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 30A (Tc) Surface Mount 4-FSMD-B

Technical documentation and resources