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FF06100J-7 - FF06100J-7

FF06100J-7

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fastSiC

SICFET N-CH 650V 20.6A TO-263-7L

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FF06100J-7 - FF06100J-7

FF06100J-7

Active
fastSiC

SICFET N-CH 650V 20.6A TO-263-7L

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFF06100J-7
Current - Continuous Drain (Id) @ 25°C20.6 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds1000 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max)83 W
Rds On (Max) @ Id, Vgs100 mOhm
Supplier Device PackageD2PAK-7L
TechnologySiC (Silicon Carbide Junction Transistor)
Vgs (Max) [Max]18 V
Vgs(th) (Max) @ Id2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 1$ 9.07
10$ 3.32
100$ 3.10
4000$ 3.02

Description

General part information

FF06100J-7

N-Channel 650 V 20.6A (Tc) 83W (Tc) Surface Mount D2PAK-7L

Documents

Technical documentation and resources