STP12NM60N

Obsolete

STMicroelectronics

MOSFET N-CH 600V 10A TO220AB

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Obsolete

STMicroelectronics

MOSFET N-CH 600V 10A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	STP12NM60N

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	30.5 nC
Input Capacitance (Ciss) (Max) @ Vds	960 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	410 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 10A (Tc) 90W (Tc) Through Hole TO-220

Technical documentation and resources