6A6-T
ActiveRectron USA
DIODE GEN PURP 1KV 6A R-6
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6A6-T
ActiveRectron USA
DIODE GEN PURP 1KV 6A R-6
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | 6A6-T |
|---|---|
| Capacitance @ Vr, F | 150 pF |
| Current - Average Rectified (Io) | 6 A |
| Current - Reverse Leakage @ Vr | 300 nA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | R-6, Axial |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | R-6 |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 800 | $ 0.50 | |
Description
General part information
6A6-T
Diode 1000 V 6A Through Hole R-6
Documents
Technical documentation and resources