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FL06150G - FL06150G

FL06150G

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fastSiC

SICFET N-CH 650V 15A PDFN8X8

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FL06150G - FL06150G

FL06150G

Active
fastSiC

SICFET N-CH 650V 15A PDFN8X8

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFL06150G
Current - Continuous Drain (Id) @ 25°C15 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)15 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs29.5 nC
Input Capacitance (Ciss) (Max) @ Vds672 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case4-PowerTSFN
Power Dissipation (Max)68 W
Rds On (Max) @ Id, Vgs150 mOhm
Supplier Device Package4-PDFN (8x8)
TechnologySiC (Silicon Carbide Junction Transistor)
Vgs (Max) [Max]15 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 1$ 5.50
10$ 2.02
100$ 1.88
3000$ 1.83

Description

General part information

FL06150G

N-Channel 650 V 15A (Tc) 68W (Tc) Surface Mount 4-PDFN (8x8)

Documents

Technical documentation and resources