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AONV125A60

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Alpha & Omega Semiconductor Inc.

LINEAR IC

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AONV125A60

Active
Alpha & Omega Semiconductor Inc.

LINEAR IC

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationAONV125A60
Current - Continuous Drain (Id) @ 25°C28 A, 4.9 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]44 nC
Input Capacitance (Ciss) (Max) @ Vds2995 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case4-PowerTSFN
Power Dissipation (Max)8.3 W, 312 W
Rds On (Max) @ Id, Vgs125 mOhm
Supplier Device Package4-DFN (8x8)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 1$ 4.45

Description

General part information

AONV125A60

N-Channel 600 V 4.9A (Ta), 28A (Tc) 8.3W (Ta), 312W (Tc) Surface Mount 4-DFN (8x8)

Documents

Technical documentation and resources

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