MR756
ActiveSolid State Inc.
DIODE GEN PURP 600V 6A
Deep-Dive with AI
Search across all available documentation for this part.
MR756
ActiveSolid State Inc.
DIODE GEN PURP 600V 6A
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MR756 |
|---|---|
| Current - Average Rectified (Io) | 6 A |
| Current - Reverse Leakage @ Vr | 25 µA |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -65 C |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 900 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MR756
Diode 600 V 6A
Documents
Technical documentation and resources
No documents available