WNSC5D04650D6J
ActiveWeEn Semiconductors Co., Ltd
DIODE SIL CARBIDE 650V 4A DPAK
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WNSC5D04650D6J
ActiveWeEn Semiconductors Co., Ltd
DIODE SIL CARBIDE 650V 4A DPAK
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | WNSC5D04650D6J |
|---|---|
| Capacitance @ Vr, F | 138 pF |
| Current - Average Rectified (Io) | 4 A |
| Current - Reverse Leakage @ Vr | 20 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | DPAK |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
WNSC5D04650D6J
Diode 650 V 4A Surface Mount DPAK
Documents
Technical documentation and resources
No documents available