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GD25LE80EEIGR

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GigaDevice Semiconductor (HK) Limited

IC FLASH 8MBIT SPI/QUAD 8USON

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GD25LE80EEIGR

Active
GigaDevice Semiconductor (HK) Limited

IC FLASH 8MBIT SPI/QUAD 8USON

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationGD25LE80EEIGR
Access Time6 ns
Clock Frequency133 MHz
Memory FormatFLASH
Memory InterfaceQuad I/O, QPI, SPI
Memory Organization [custom]1 M
Memory Organization [custom]8 bits
Memory Size1024 KB
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case8-XFDFN Exposed Pad
Supplier Device Package8-USON (3x2)
TechnologyFLASH - NOR (SLC)
Voltage - Supply [Max]2 V
Voltage - Supply [Min]1.65 V
Write Cycle Time - Word, Page [custom]60 µs
Write Cycle Time - Word, Page [custom]2.4 ms

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.48
6000$ 0.45
9000$ 0.44
15000$ 0.42
21000$ 0.41

Description

General part information

GD25LE80EEIGR

FLASH - NOR (SLC) Memory IC 8Mbit SPI - Quad I/O, QPI 133 MHz 6 ns 8-USON (3x2)

Documents

Technical documentation and resources