SSM3J145TU,LXHF

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Toshiba Semiconductor and Storage

SMOS P-CH VDSS:-20V VGSS:-8/+6V

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Toshiba Semiconductor and Storage

SMOS P-CH VDSS:-20V VGSS:-8/+6V

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J145TU,LXHF

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.6 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	270 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max) [Max]	500 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	103 mOhm
Supplier Device Package	UFM
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	6 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	1 V

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