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QX817N-FeH-DE - QX817N-FeH-DE

QX817N-FeH-DE

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Beking Optoelectronics

OPTOISOLATOR TRANSISTOR 817

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QX817N-FeH-DE - QX817N-FeH-DE

QX817N-FeH-DE

Active
Beking Optoelectronics

OPTOISOLATOR TRANSISTOR 817

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationQX817N-FeH-DE
Current - DC Forward (If) (Max)45 mA
Current - Output / Channel50 mA
Current Transfer Ratio (Max) [Max]600 %
Current Transfer Ratio (Min) [Min]80 %
Input TypeDC
Mounting TypeThrough Hole
Number of Channels1
Operating Temperature [Max]110 °C
Operating Temperature [Min]-55 °C
Output Type1.81 mOhm
Package / Case4-DIP (0.300", 7.62mm)
Rise / Fall Time (Typ) [custom]3 µs
Rise / Fall Time (Typ) [custom]4 µs
Supplier Device Package4-DIP
Vce Saturation (Max)200 mV
Voltage - Forward (Vf) (Typ)1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 2000$ 0.05
4000$ 0.03
10000$ 0.02
20000$ 0.02
40000$ 0.02

Description

General part information

QX817N-FeH-DE

Optoisolator Transistor Output 5000Vrms 1 Channel 4-DIP

Documents

Technical documentation and resources