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GE17045EEA3 - GE17045EEA3

GE17045EEA3

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GE Aerospace

SIC 6N-CH 1700V 425A

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GE17045EEA3 - GE17045EEA3

GE17045EEA3

Active
GE Aerospace

SIC 6N-CH 1700V 425A

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationGE17045EEA3
Configuration6 N-Channel (3-Phase Bridge)
Current - Continuous Drain (Id) @ 25°C425 A
Drain to Source Voltage (Vdss)1.7 kV
Drain to Source Voltage (Vdss)1700 V
Gate Charge (Qg) (Max) @ Vgs1207 nC
Input Capacitance (Ciss) (Max) @ Vds29100 pF
Mounting TypeChassis Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseModule
Rds On (Max) @ Id, Vgs4.45 mOhm
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 3795.00
10$ 3575.00

Description

General part information

GE17045EEA3

Mosfet Array 1700V (1.7kV) 425A (Tc) 1250W (Tc) Chassis Mount

Documents

Technical documentation and resources