
GE12047BCA3
ActiveGE Aerospace
MOSFET 2N-CH 1200V 475A
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet

GE12047BCA3
ActiveGE Aerospace
MOSFET 2N-CH 1200V 475A
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | GE12047BCA3 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 475 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Gate Charge (Qg) (Max) @ Vgs | 1248 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 29300 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | Module |
| Power - Max [Max] | 1250 W |
| Rds On (Max) @ Id, Vgs | 4.4 mOhm |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
GE12047BCA3
Mosfet Array 1200V (1.2kV) 475A 1250W Chassis Mount
Documents
Technical documentation and resources