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GD25D10EKIGR

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GigaDevice Semiconductor (HK) Limited

NOR FLASH

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GD25D10EKIGR

Active
GigaDevice Semiconductor (HK) Limited

NOR FLASH

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationGD25D10EKIGR
Access Time6 ns
Clock Frequency104 MHz
Memory FormatFLASH
Memory InterfaceSPI - Dual I/O
Memory Organization128K x 8
Memory Size1 Mbit
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case8-XFDFN Exposed Pad
Supplier Device Package8-USON (1.5x1.5)
TechnologyFLASH - NOR (SLC)
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]2.7 V
Write Cycle Time - Word, Page [custom]100 µs
Write Cycle Time - Word, Page [custom]4 ms

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.23
6000$ 0.22
15000$ 0.21
30000$ 0.20

Description

General part information

GD25D10EKIGR

FLASH - NOR (SLC) Memory IC 1Mbit SPI - Dual I/O 104 MHz 6 ns 8-USON (1.5x1.5)

Documents

Technical documentation and resources

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